1Sharifa Bekmuradovna Utamuradova, 2Muzafarova Sultanpahsa Anvarovna, 3Achilov Alimardon Samaritdinovich,
1Doctor of Physical and Mathematical Sciences, Professor, Director of the Research Institute of Semiconductor Physics and Microelectronics of the National University of Uzbekistan, Institute of Semiconductor Physics and Microelectronics,NU of Uzbekistan Yangi Almazor Street 20, Tashkent 100057, Uzbekistan https://orcid.org/0000-0002-1718-1122
2Doctor of Physical and Mathematical Sciences, Head of laboratory Microelectronics and Electrotechnical Materials Science Institute of Semiconductor Physics and Microelectronics, NU of Uzbekistan Yangi Almazor Street 20, Tashkent100057, Uzbekistan https://orcid.org/0000-0001-5491-7699
3Doctor of Physical and Mathematical Sciences, Philosophy, Senior Researcher Physical-Technical Institute of the Uzbekistan Academy of Sciences, Chingiz Aytmatov str. 2B, Tashkent, 100084 Uzbekistan https://orcid .org / 0000-0002-0375-4612
DOI : https://doi.org/10.47191/ijmra/v7-i04-21Google Scholar Download Pdf
ABSTRACT:
The electrical properties of the created doped and undoped wide-gap layers of metal oxides SnO 2, In 2 O 3 , ITO , CdO , MoO 3 were studied. Depending on technological factors. The optimal growth conditions for these semiconductor materials have been determined. The study of the electro physical and optical properties of the resulting oxide films confirmed the stability of the operational parameters of oxide materials SnO 2, In 2 O 3 , ITO , CdO , MoO 3 . The AFM method showed, along with the oxides SnO 2, In 2 O 3 , ITO , CdO , the oxide of pure MoO3 has The highest transmittance is in the visible region of the spectrum , where the absorption edge shifts toward higher wavelengths.
KEYWORDS:Metal oxide, spectrum, transmission, mobility, wide-gap semiconductors, doping.
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Volume 07 Issue 04 April 2024
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